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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER
2SB892
FEATURE Power dissipation PCM:
TRANSISTOR (PNP)
2. COLLECTOR
1
W (Tamb=25)
3. BASE
Collector current -2 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150
123
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN -60 -50 -6 -0.1 -0.1 100 40 -0.4 -1.2 150 V V MHz 560 MAX UNIT V V V A A
Ic= -10A , IE=0 IC= -1mA , IB=0 IE=- 100A, IC=0 VCB= -50V , IE=0 VEB= -4V , IC=0
VCE=-2V, IC= -100mA VCE=-2V, IC= -1.5A IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCE= -10 V, IC= -50mA
fT
CLASSIFICATION OF hFE(1)
Rank Range R 100-200 S 140-280 T 200-400 U 280-560


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